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SN65HVD10DG4 - 

Differential Transceiver RS485, 1Mbps, 3V-3.6V supply, SOIC-8

TEXAS INSTRUMENTS SN65HVD10DG4

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Produsentens varenummer:
SN65HVD10DG4
Varenummer:
1207267
Teknisk datablad:
(EN)
Se alle tekniske dokumenter

Produktinformasjon

:
-40°C
:
SOIC
:
1
:
85°C
:
8Pins
:
-
:
-
:
1Drivers
:
3V
:
RS485
:
Line Driver / Receiver
:
Each
:
3.6V
:
MSL 1 - Unlimited
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Produktoversikt

The SN65HVD10DG4 is a 3.3V Differential Bus Transceiver combines a 3-state differential line driver and differential input line receiver that operate with a single 3.3V power supply. Designed for balanced transmission lines and meet or exceed ANSI standard TIA/EIA-485-A and ISO 8482:1993. This differential bus transceiver is monolithic integrated circuits designed for bidirectional data communication on multipoint bus-transmission lines. The drivers and receivers have active-high and active-low enables, respectively, that can be externally connected together to function as direction control. Very low device standby supply current can be achieved by disabling the driver and the receiver. The driver differential outputs and receiver differential inputs connect internally to form a differential input/output (I/O) bus port that is designed to offer minimum loading to the bus whenever the driver is disabled or VCC = 0.
  • Operates with a 3.3V supply
  • Bus-pin ESD protection exceeds 16kV HBM
  • 1/8 Unit load option available (up to 256 nodes on bus)
  • Optional driver output transition times for signalling rates of 1, 10 and 32Mbps
  • Meets or exceeds requirements of ANSI TIA/EIA-485-A
  • Bus-pin short-circuit protection from -7 to 12V
  • 1µA Typical low-current standby mode
  • Open-circuit, idle-bus and shorted-bus failsafe receiver
  • Thermal shutdown protection
  • Glitch-free power-up and power down protection for hot plugging applications
  • Green product and no Sb/Br

Applikasjoner

Motor Drive & Control, Metering, Communications & Networking, Security, Industrial, Automation & Process Control, Building Automation

Advarsler

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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