DG418DY-T1-E3

DG418DY-T1-E3 is a monolithic CMOS analogue switch. It is designed to provide high-performance switching of analogue signals. Combining low power, low leakages, high speed, low on-resistance, and small physical size, it is ideally suited for portable and battery-powered industrial and military applications requiring high performance and efficient use of board space. To achieve high-voltage ratings and superior switching performance, this device is built on Vishay Siliconix’s high-voltage silicon gate (HVSG) process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. It is used in applications such as precision test equipment, precision instrumentation, battery-powered systems, sample-and-hold circuits, military radios, guidance and control systems, and hard disk drives.

• Wide dynamic range, low signal errors and distortion, TTL and CMOS compatible
• Simple interfacing, reduced board space, improved reliability
• Drain-source on-resistance is 20 ohm typical at (IS = - 10mA, VD = ±12.5V)
• Switch off leakage current is - 0.1nA typical at (V+ = 16.5, V- = - 16.5V)
• Charge injection is 60pC typical at (CL = 10nF, Vgen = 0V, Rgen = 0 ohm)
• Positive supply current is 0.001µA typical at (V+ = 16.5V, V- = - 16.5V)
• Channel off leakage current is - 0.4nA typical at (V+ = 16.5V, V- = - 16.5V)
• Logic supply current is 0.001µA typical at (V+ = 16.5V, V- = - 16.5V, VIN = 0 or 5V)
• Operating temperature range from -40°C to +85°C
• 8-pin narrow SOIC package