Silicon Carbide (SiC) MOSFETs & Modules: 815 produkter funnet

Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 0.169 ohm, HiP247
STMICROELECTRONICS
Bestillingskode
2807234
Pris for: Each
1+
kr 154,800
5+
kr 142,620
10+
kr 130,330
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id20A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.169ohm
    Transistor Case StyleHiP247
    No. of Pins3Pins
    Rds(on) Test Voltage20V
    Gate Source Threshold Voltage Max3.5V
    Power Dissipation175W
    Operating Temperature Max200°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 118 A, 650 V, 0.017 ohm, TO-247N
ROHM
Bestillingskode
2947063
Pris for: Each
1+
kr 978,910
5+
kr 915,790
10+
kr 852,680
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id118A
    Drain Source Voltage Vds650V
    Drain Source On State Resistance0.017ohm
    Transistor Case StyleTO-247N
    No. of Pins3Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation427W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 35 A, 1 kV, 0.065 ohm, TO-263 (D2PAK)
WOLFSPEED
Bestillingskode
2749950
Pris for: Each
1+
kr 146,250
5+
kr 144,260
10+
kr 142,150
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id35A
    Drain Source Voltage Vds1kV
    Drain Source On State Resistance0.065ohm
    Transistor Case StyleTO-263 (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage15V
    Gate Source Threshold Voltage Max2.1V
    Power Dissipation113.5W
    Operating Temperature Max150°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 299 A, 1.2 kV, 0.0087 ohm
STARPOWER
Bestillingskode
2986056
Pris for: Each
1+
kr 7 067,000
  • MOSFET Module ConfigurationHalf Bridge
    Channel TypeDual N Channel
    Continuous Drain Current Id299A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.0087ohm
    Transistor Case StyleModule
    No. of Pins-Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation-mW
    Operating Temperature Max150°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.14 ohm, TO-247
INFINEON
Bestillingskode
3223687
Pris for: Each
1+
kr 97,770
5+
kr 83,490
10+
kr 69,090
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id19A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.14ohm
    Transistor Case StyleTO-247
    No. of Pins4Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max4.5V
    Power Dissipation94W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.021 ohm, TO-247
WOLFSPEED
Bestillingskode
3257419
Pris for: Each
1+
kr 443,550
5+
kr 427,510
10+
kr 411,470
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id100A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.021ohm
    Transistor Case StyleTO-247
    No. of Pins3Pins
    Rds(on) Test Voltage15V
    Gate Source Threshold Voltage Max2.5V
    Power Dissipation469W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferY-Ex

    RoHS

Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
ROHM
Bestillingskode
2678786
Pris for: Each
1+
kr 116,980
5+
kr 112,760
10+
kr 108,430
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id30A
    Drain Source Voltage Vds650V
    Drain Source On State Resistance0.08ohm
    Transistor Case StyleTO-247N
    No. of Pins3Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation134W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.056 ohm, TO-247
ONSEMI
Bestillingskode
3464026
Pris for: Each
1+
kr 477,510
5+
kr 449,880
10+
kr 422,120
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id60A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.056ohm
    Transistor Case StyleTO-247
    No. of Pins3Pins
    Rds(on) Test Voltage20V
    Gate Source Threshold Voltage Max4.3V
    Power Dissipation348W
    Operating Temperature Max175°C
    Product Range-
    SVHCLead (14-Jun-2023)
    Overholdelse av begrensning av farlige stofferY-Ex

    RoHS

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK)
ONSEMI
Bestillingskode
3528497RL
Pris for: Each (Supplied on Cut Tape)
Cut Tape
100+
kr 87,940
500+
kr 84,190
800+
kr 80,440
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Transistor PolarityN Channel
    Channel TypeN Channel
    Continuous Drain Current Id19.5A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.16ohm
    On Resistance Rds(on)0.16ohm
    Transistor Case StyleTO-263HV (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage20V
    Gate Source Threshold Voltage Max3V
    Power Dissipation136W
    Power Dissipation Pd136W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferY-Ex

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK)
INFINEON
Bestillingskode
3582467
Pris for: Each (Supplied on Cut Tape)
Cut Tape
1+
kr 87,350
5+
kr 74,820
10+
kr 62,180
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id4.7A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.35ohm
    Transistor Case StyleTO-263 (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max4.5V
    Power Dissipation65W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 61 A, 1.7 kV, 0.045 ohm, TO-247
GENESIC SEMICONDUCTOR
Bestillingskode
3598624
Pris for: Each
1+
kr 780,900
5+
kr 683,360
10+
kr 566,150
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id61A
    Drain Source Voltage Vds1.7kV
    Drain Source On State Resistance0.045ohm
    Transistor Case StyleTO-247
    No. of Pins4Pins
    Rds(on) Test Voltage15V
    Gate Source Threshold Voltage Max2.7V
    Power Dissipation438W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide Power MOSFET, N Channel, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
ROHM
Bestillingskode
2680147
Pris for: Each
1+
kr 408,420
5+
kr 373,410
10+
kr 338,400
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id55A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.04ohm
    Transistor Case StyleTO-247N
    No. of Pins3Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation262W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 0.08 ohm, TO-247N
ROHM
Bestillingskode
3052190
Pris for: Each
1+
kr 279,270
5+
kr 250,460
10+
kr 221,660
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id31A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.08ohm
    Transistor Case StyleTO-247N
    No. of Pins3Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation165W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 70 A, 650 V, 0.03 ohm, TO-247
ROHM
Bestillingskode
3241768
Pris for: Each
1+
kr 311,110
5+
kr 304,870
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id70A
    Drain Source Voltage Vds650V
    Drain Source On State Resistance0.03ohm
    Transistor Case StyleTO-247
    No. of Pins4Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation262W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK)
ONSEMI
Bestillingskode
3367862
Pris for: Each (Supplied on Cut Tape)
Cut Tape
1+
kr 543,670
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id112A
    Drain Source Voltage Vds900V
    Drain Source On State Resistance0.02ohm
    Transistor Case StyleTO-263 (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage15V
    Gate Source Threshold Voltage Max2.6V
    Power Dissipation477W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferY-Ex

    RoHS

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module
ROHM
Bestillingskode
3573228
Pris for: Each
1+
kr 16 568,800
  • MOSFET Module ConfigurationHalf Bridge
    Channel TypeDual N Channel
    Continuous Drain Current Id400A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance-
    Transistor Case StyleModule
    No. of Pins-Pins
    Rds(on) Test Voltage-
    Gate Source Threshold Voltage Max4V
    Power Dissipation2.45kW
    Operating Temperature Max150°C
    Product Range-
    SVHCLead (17-Jan-2023)
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 22 A, 1.2 kV, 0.16 ohm, TO-263 (D2PAK)
GENESIC SEMICONDUCTOR
Bestillingskode
3598649
Pris for: Each
1+
kr 89,460
5+
kr 80,090
10+
kr 70,720
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id22A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.16ohm
    Transistor Case StyleTO-263 (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage15V
    Gate Source Threshold Voltage Max2.69V
    Power Dissipation128W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, TO-247
STMICROELECTRONICS
Bestillingskode
3387274
Pris for: Each
1+
kr 126,460
5+
kr 125,640
10+
kr 124,820
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id45A
    Drain Source Voltage Vds650V
    Drain Source On State Resistance0.045ohm
    Transistor Case StyleTO-247
    No. of Pins3Pins
    Rds(on) Test Voltage20V
    Gate Source Threshold Voltage Max3.2V
    Power Dissipation240W
    Operating Temperature Max200°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.04 ohm, TO-263HV (D2PAK)
ONSEMI
Bestillingskode
3463999
Pris for: Each (Supplied on Cut Tape)
Cut Tape
1+
kr 178,330
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id60A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.04ohm
    Transistor Case StyleTO-263HV (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage20V
    Gate Source Threshold Voltage Max3V
    Power Dissipation357W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferY-Ex

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK)
INFINEON
Bestillingskode
3577330
Pris for: Each (Supplied on Cut Tape)
Cut Tape
1+
kr 87,940
5+
kr 75,410
10+
kr 62,880
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id9.8A
    Drain Source Voltage Vds1.7kV
    Drain Source On State Resistance0.364ohm
    Transistor Case StyleTO-263 (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage15V
    Gate Source Threshold Voltage Max4.5V
    Power Dissipation107W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 39 A, 650 V, 0.048 ohm, TO-247
INFINEON
Bestillingskode
3500948
Pris for: Each
1+
kr 144,030
5+
kr 125,520
10+
kr 107,020
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id39A
    Drain Source Voltage Vds650V
    Drain Source On State Resistance0.048ohm
    Transistor Case StyleTO-247
    No. of Pins4Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max4.5V
    Power Dissipation125W
    Operating Temperature Max150°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module
ROHM
Bestillingskode
3573231
Pris for: Each
1+
kr 9 983,320
  • MOSFET Module ConfigurationHalf Bridge
    Channel TypeDual N Channel
    Continuous Drain Current Id400A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance-
    Transistor Case StyleModule
    No. of Pins-Pins
    Rds(on) Test Voltage-
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation1.57kW
    Operating Temperature Max150°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 300 A, 1.2 kV, Module
ROHM
Bestillingskode
3573226
Pris for: Each
1+
kr 10 997,120
  • MOSFET Module ConfigurationHalf Bridge
    Channel TypeDual N Channel
    Continuous Drain Current Id300A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance-
    Transistor Case StyleModule
    No. of Pins-Pins
    Rds(on) Test Voltage-
    Gate Source Threshold Voltage Max5.6V
    Power Dissipation1.26kW
    Operating Temperature Max150°C
    Product Range-
    SVHCLead (17-Jan-2023)
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK)
INFINEON
Bestillingskode
3582461
Pris for: Each (Supplied on Cut Tape)
Cut Tape
1+
kr 267,090
5+
kr 252,100
10+
kr 237,120
Flere priser ....
  • MOSFET Module ConfigurationSingle
    Channel TypeN Channel
    Continuous Drain Current Id56A
    Drain Source Voltage Vds1.2kV
    Drain Source On State Resistance0.03ohm
    Transistor Case StyleTO-263 (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage18V
    Gate Source Threshold Voltage Max4.5V
    Power Dissipation300W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

Silicon Carbide MOSFET, Single, N Channel, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK)
INFINEON
Bestillingskode
3577330RL
Pris for: Each (Supplied on Cut Tape)
Cut Tape
100+
kr 57,730
250+
kr 54,330
  • MOSFET Module ConfigurationSingle
    Transistor PolarityN Channel
    Channel TypeN Channel
    Continuous Drain Current Id9.8A
    Drain Source Voltage Vds1.7kV
    On Resistance Rds(on)0.364ohm
    Drain Source On State Resistance0.364ohm
    Transistor Case StyleTO-263 (D2PAK)
    No. of Pins7Pins
    Rds(on) Test Voltage15V
    Gate Source Threshold Voltage Max4.5V
    Power Dissipation107W
    Power Dissipation Pd107W
    Operating Temperature Max175°C
    Overholdelse av begrensning av farlige stofferJa

    RoHS

1-25 av 815 artikler
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STMICROELECTRONICS
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INFINEON
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ROHM