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Antall | |
---|---|
1+ | kr 43,110 |
10+ | kr 41,150 |
25+ | kr 40,350 |
50+ | kr 39,550 |
100+ | kr 38,740 |
250+ | kr 37,820 |
500+ | kr 37,020 |
Produktinformasjon
Produktoversikt
The LM5111-2M/NOPB is a dual compound Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The driver can be operated in parallel with inputs and outputs connected to double the drive current capability.
- Independently drives two N-channel MOSFETs
- Compound CMOS and bipolar outputs reduce output current variation
- Two channels can be connected in parallel to double the drive current
- Independent inputs (TTL compatible)
- Fast rise and fall time (14/12ns rise/fall with 2nF load)
- Available in dual non-inverting, dual inverting and combination configurations
- Supply rail under-voltage lockout protection (UVLO)
- Pin-compatible with industry standard gate drivers
- Green product and no Sb/Br
Applikasjoner
Power Management, Motor Drive & Control
Tekniske spesifikasjoner
2Channels
Low Side
8Pins
Surface Mount
3A
3.5V
-40°C
25ns
-
No SVHC (27-Jun-2018)
-
MOSFET
SOIC
Inverting
5A
14V
125°C
25ns
-
Lovgivning og miljø
Land der forrige produksjonsprosess av betydning ble fortattOpprinnelsesland:Malaysia
Land der forrige produksjonsprosess av betydning ble fortatt
RoHS
RoHS
Sertifikat for produktsamsvar