ADRF5301BCCZN-R7

ADRF5301BCCZN-R7 is a SPDT switch manufactured in the silicon process. This incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3V applied to the VDD pin. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible control. Application includes industrial scanner test instrumentation, cellular infrastructure mmWave 5G, military radios, radars, electronic counter measures (ECMs), microwave radios and very small aperture terminals (VSATs).

• 20-terminal land grid array [LGA] package, temperature range from -40°C to +105°C
• Reflective design, low insertion loss is 1.4dB typical
• High isolation is 30dB typical, high input linearity, P0.1dB is 36dBm, input IP3 is 52dBm
• High RF power handling, 28dBm average, 36dBm peak
• Single-supply operation is 3.3V, internal NVG
• RF settling time (0.1dB final RF output) is 50ns

Merknader

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