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S29GL01GS11FHIV10
Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, 110ns, FBGA-64
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ProdusentINFINEON
Produsentens varenummerS29GL01GS11FHIV10
Varenummer4128130
Produktsortiment3V Parallel NOR Flash Memories
Også kjent somSP005673117, S29GL01GS11FHIV10
Teknisk datablad
860 På Lager
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GRATIS Standard levering tilgjengelig
for bestillinger over kr 0,00
EKSPRESS-levering tilgjengelig
Bestill før kl. 17.00
nøyaktige leveringstider vil bli beregnet i kassen
| Antall | |
|---|---|
| 1+ | kr 128,700 |
| 10+ | kr 119,240 |
| 25+ | kr 114,510 |
| 50+ | kr 112,970 |
| 100+ | kr 108,590 |
Pris for:Each
Minst: 1
Flere: 1
kr 128,70 (eks. MVA)
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Produktinformasjon
ProdusentINFINEON
Produsentens varenummerS29GL01GS11FHIV10
Varenummer4128130
Produktsortiment3V Parallel NOR Flash Memories
Også kjent somSP005673117, S29GL01GS11FHIV10
Teknisk datablad
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Size1Gbit
Flash Memory Configuration128M x 8bit
Memory Configuration128M x 8bit
InterfacesParallel
IC Interface TypeParallel
Memory Case StyleFBGA
IC Case / PackageFBGA
No. of Pins64Pins
Clock Frequency Max-
Clock Frequency-
Access Time110ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
Produktoversikt
S29GL01GS11FHIV10 is a S29GL01GS MIRRORBIT™ page-mode flash memory IC is fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
- CMOS 3.0V core with versatile I/O, single supply (VCC) for read/program/erase (2.7V to 3.6V)
- Versatile I/O feature, wide I/O voltage range (VIO): 1.65V to VCC, 110ns random access time
- ×16 data bus, asynchronous 32-byte page read, 512-byte programming buffer
- Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
- Sector erase-uniform 128kbyte sectors, advanced sector protection (ASP), 20 years data retention
- Status register, data polling, and ready/busy pin methods to determine device status
- Suspend and resume commands for program and erase operations, 100000 program/erase cycles
- Separate 1024-byte one time program (OTP) array with two lockable regions
- Fortified ball-grid array package (LAA064), industrial (–40 to 85°C) temperature
- VIO = 1.65 V to VCC, VCC = 2.7 V to 3.6 V, highest address sector protected
Tekniske spesifikasjoner
Flash Memory Type
Parallel NOR
Memory Size
1Gbit
Memory Configuration
128M x 8bit
IC Interface Type
Parallel
IC Case / Package
FBGA
Clock Frequency Max
-
Access Time
110ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
SVHC
No SVHC (21-Jan-2025)
Memory Density
1Gbit
Flash Memory Configuration
128M x 8bit
Interfaces
Parallel
Memory Case Style
FBGA
No. of Pins
64Pins
Clock Frequency
-
Supply Voltage Min
2.7V
Supply Voltage Nom
-
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
Teknisk dokumentasjon (1)
Lovgivning og miljø
Tariffnr.:85423275
US ECCN:3A991.b.1.a
EU ECCN:NLR
Overholdelse av begrensning av farlige stoffer:Informasjon kommer
RoHS-samsvar angående ftalater:Informasjon kommer
SVHC:No SVHC (21-Jan-2025)
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