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S29GL01GT11TFIV20
Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, 110ns, TSOP-56
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ProdusentINFINEON
Produsentens varenummerS29GL01GT11TFIV20
Varenummer4128134
Produktsortiment3V Parallel NOR Flash Memories
Også kjent somSP005667117, S29GL01GT11TFIV20
Teknisk datablad
872 På Lager
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| Antall | |
|---|---|
| 1+ | kr 172,940 |
| 10+ | kr 156,500 |
| 25+ | kr 154,370 |
| 50+ | kr 152,480 |
| 100+ | kr 133,550 |
Pris for:Each
Minst: 1
Flere: 1
kr 172,94 (eks. MVA)
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Produktinformasjon
ProdusentINFINEON
Produsentens varenummerS29GL01GT11TFIV20
Varenummer4128134
Produktsortiment3V Parallel NOR Flash Memories
Også kjent somSP005667117, S29GL01GT11TFIV20
Teknisk datablad
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Size1Gbit
Flash Memory Configuration128M x 8bit
Memory Configuration128M x 8bit
InterfacesParallel
IC Interface TypeParallel
Memory Case StyleTSOP
IC Case / PackageTSOP
No. of Pins56Pins
Clock Frequency Max-
Clock Frequency-
Access Time110ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max105°C
Product Range3V Parallel NOR Flash Memories
Produktoversikt
S29GL01GT11TFIV20 is a MIRRORBIT™ flash memory fabricated on 45-nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.
- 56-TSOP package type
- Single supply (VCC) for read / program / erase (2.7V to 3.6V)
- Versatile I/O feature, wide I/O voltage range (VIO) 1.65V to VCC
- ×8/×16 data bus, asynchronous 32byte page read, four lockable regions (SSR0–SSR3)
- Single word and multiple program on same word options, SSR0 is factory locked
- Automatic error checking and correction internal hardware ECC with single bit error correction
- Sector erase, uniform 128KB sectors, SSR3 is password read protect
- Suspend and resume commands for program and erase operations
- Status register, data polling and ready/busy pin methods to determine device status
- Volatile and non-volatile protection methods for each sector
Tekniske spesifikasjoner
Flash Memory Type
Parallel NOR
Memory Size
1Gbit
Memory Configuration
128M x 8bit
IC Interface Type
Parallel
IC Case / Package
TSOP
Clock Frequency Max
-
Access Time
110ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
105°C
SVHC
No SVHC (21-Jan-2025)
Memory Density
1Gbit
Flash Memory Configuration
128M x 8bit
Interfaces
Parallel
Memory Case Style
TSOP
No. of Pins
56Pins
Clock Frequency
-
Supply Voltage Min
2.7V
Supply Voltage Nom
-
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
Teknisk dokumentasjon (1)
Lovgivning og miljø
Tariffnr.:85423275
US ECCN:3A991.b.1.a
EU ECCN:NLR
Overholdelse av begrensning av farlige stoffer:Informasjon kommer
RoHS-samsvar angående ftalater:Informasjon kommer
SVHC:No SVHC (21-Jan-2025)
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