IRFIBE30GPBF
Power MOSFET, N Channel, 800 V, 2.1 A, 3 ohm, TO-220FP, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | kr 14.680 |
| 10+ | kr 14.560 |
| 100+ | kr 14.450 |
| 500+ | kr 14.330 |
| 1000+ | kr 14.210 |
| 5000+ | kr 13.980 |
Product Information
Product Overview
The IRFIBE30GPBF is a 800V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware in applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- Low thermal resistance
- Sink to lead creepage
- High voltage isolation
- Dynamic dV/dt rating
Applications
Industrial, Power Management
Technical Specifications
N Channel
2.1A
TO-220FP
10V
35W
150°C
-
Lead (21-Jan-2025)
800V
3ohm
Through Hole
4V
3Pins
-
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate