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XP3P010M
Power MOSFET, P Channel, 30 V, 13.3 A, 0.01 ohm, SOIC, Surface Mount
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ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3P010M
Order Code4168949
Product RangeXP3P010 Series
Technical Datasheet
200 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | kr 9.960 |
| 10+ | kr 6.780 |
| 100+ | kr 4.580 |
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Product Information
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3P010M
Order Code4168949
Product RangeXP3P010 Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id13.3A
Drain Source On State Resistance0.01ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeXP3P010 Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
13.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
XP3P010 Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001