C2M1000170D
Silicon Carbide MOSFET, Single, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, TO-247
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| Antall | |
|---|---|
| 1+ | kr 118,450 |
| 5+ | kr 105,160 |
| 10+ | kr 90,370 |
| 50+ | kr 79,860 |
| 100+ | kr 75,460 |
| 250+ | kr 72,460 |
Produktinformasjon
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Produktoversikt
The C2M1000170D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, ultra low drain gate capacitance, higher system efficiency, reduced cooling requirements and increased system reliability. Applications include auxiliary power supplies, switch mode power supplies and high voltage capacitive loads.
- Drain to source voltage (Vds) of 1.7kV
- Continuous drain current of 5A
- Power dissipation of 69W
- Operating junction temperature of -55°C to 150°C
- Low on state resistance of 1ohm at Vgs of 20V
Applikasjoner
Power Management, Consumer Electronics, Portable Devices, Industrial
Tekniske spesifikasjoner
Single
4.9A
0.95ohm
3Pins
2.4V
150°C
-
N Channel
1.7kV
TO-247
20V
69W
-
No SVHC (17-Dec-2014)
Teknisk dokumentasjon (3)
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Land der forrige produksjonsprosess av betydning ble fortattOpprinnelsesland:Philippines
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