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IGC037S12S1XTMA1
Gallium Nitride (GaN) Transistor, 120 V, 71 A, 0.0037 ohm, 10 nC, TSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIGC037S12S1XTMA1
Order Code4680817RL
Also Known AsIGC037S12S1, SP006027453
Technical Datasheet
4,990 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | kr 27.930 |
| 500+ | kr 23.450 |
| 1000+ | kr 20.000 |
Price for:Each (Supplied on Cut Tape)
Minimum: 150
Multiple: 1
kr 4,189.50 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGC037S12S1XTMA1
Order Code4680817RL
Also Known AsIGC037S12S1, SP006027453
Technical Datasheet
Drain Source Voltage Vds120V
Continuous Drain Current Id71A
Drain Source On State Resistance0.0037ohm
Typical Gate Charge10nC
No. of Pins6Pins
Technical Specifications
Drain Source Voltage Vds
120V
Drain Source On State Resistance
0.0037ohm
No. of Pins
6Pins
Continuous Drain Current Id
71A
Typical Gate Charge
10nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability