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IGLD65R140D2AUMA1
Gallium Nitride (GaN) Transistor, 650 V, 12 A, 0.17 ohm, 1.8 nC, LSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIGLD65R140D2AUMA1
Order Code4680827RL
Also Known AsIGLD65R140D2, SP005825083
Technical Datasheet
2,500 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | kr 26.670 |
| 500+ | kr 22.420 |
| 1000+ | kr 19.080 |
Price for:Each (Supplied on Cut Tape)
Minimum: 150
Multiple: 1
kr 4,000.50 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGLD65R140D2AUMA1
Order Code4680827RL
Also Known AsIGLD65R140D2, SP005825083
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id12A
Drain Source On State Resistance0.17ohm
Typical Gate Charge1.8nC
No. of Pins8Pins
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.17ohm
No. of Pins
8Pins
Continuous Drain Current Id
12A
Typical Gate Charge
1.8nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability