FFSB1065B-F085
Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 650 V, 10 A, 25 nC
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | kr 31.380 |
| 10+ | kr 23.800 |
| 100+ | kr 21.840 |
Product Information
Product Overview
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
EliteSiC Series
650V
25nC
3 Pin
Surface Mount
Lead (27-Jun-2024)
Single
10A
TO-263 (D2PAK)
175°C
AEC-Q101
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate