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NVH4L160N120SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 17.3 A, 1.2 kV, 0.16 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNVH4L160N120SC1
Order Code3464025
Product RangeEliteSiC Series
Technical Datasheet
309 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | kr 82.770 |
| 5+ | kr 82.540 |
| 10+ | kr 82.310 |
| 50+ | kr 66.330 |
| 100+ | kr 64.950 |
| 250+ | kr 63.690 |
Price for:Each
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kr 82.77 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVH4L160N120SC1
Order Code3464025
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id17.3A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3.1V
Power Dissipation111W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
17.3A
Drain Source On State Resistance
0.16ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
3.1V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
111W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability