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                    • Reduced Prices
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      SIS412DN-T1-GE3

                      Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount

                      VISHAY SIS412DN-T1-GE3
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerVISHAY
                      Manufacturer Part NoSIS412DN-T1-GE3
                      Order Code1779238
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      36,091 In Stock

                      Need more?

                      1-3 Working Days Delivery
                      Order before 17:00 standard shipping
                      QuantityPrice (ex VAT)
                      1+kr 6.020
                      10+kr 4.950
                      100+kr 3.740
                      500+kr 2.970
                      1000+kr 2.470
                      5000+kr 2.240
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      kr 6.02 (ex VAT)
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerVISHAY
                      Manufacturer Part NoSIS412DN-T1-GE3
                      Order Code1779238
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Drain Source Voltage Vds30V
                      Continuous Drain Current Id12A
                      Drain Source On State Resistance0.02ohm
                      Transistor Case StylePowerPAK 1212
                      Transistor MountingSurface Mount
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max1V
                      Power Dissipation15.6W
                      No. of Pins8Pins
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      MSL-
                      SVHCNo SVHC (07-Nov-2024)

                      Product Overview

                      The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.

                      • Halogen-free according to IEC 61249-2-21 definition
                      • 100% Rg Tested

                      Applications

                      Power Management, Consumer Electronics, Computers & Computer Peripherals

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      12A

                      Transistor Case Style

                      PowerPAK 1212

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      15.6W

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      No SVHC (07-Nov-2024)

                      Drain Source Voltage Vds

                      30V

                      Drain Source On State Resistance

                      0.02ohm

                      Transistor Mounting

                      Surface Mount

                      Gate Source Threshold Voltage Max

                      1V

                      No. of Pins

                      8Pins

                      Product Range

                      -

                      MSL

                      -

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      China
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (07-Nov-2024)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.000076
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