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                    • Reduced Prices
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. MOSFET Modules
                      Print Page

                      IXFN80N50

                      MOSFET Transistor, HiPerFET, N Channel, 80 A, 500 V, 0.055 ohm, 10 V, 4.5 V

                      IXYS SEMICONDUCTOR IXFN80N50
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerIXYS SEMICONDUCTOR
                      Manufacturer Part NoIXFN80N50
                      Order Code7348029
                      Product RangeHiPerFET Series
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      84 In Stock

                      Need more?

                      1-3 Working Days Delivery
                      Order before 17:00 standard shipping
                      Available until stock is exhausted
                      QuantityPrice (ex VAT)
                      1+kr 635.650
                      5+kr 603.880
                      10+kr 461.620
                      50+kr 449.290
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      kr 635.65 (ex VAT)
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerIXYS SEMICONDUCTOR
                      Manufacturer Part NoIXFN80N50
                      Order Code7348029
                      Product RangeHiPerFET Series
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Transistor PolarityN Channel
                      Continuous Drain Current Id80A
                      Drain Source Voltage Vds500V
                      Drain Source On State Resistance0.055ohm
                      On Resistance Rds(on)0.055ohm
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max4.5V
                      Transistor MountingModule
                      Power Dissipation Pd780W
                      Power Dissipation780W
                      Operating Temperature Max150°C
                      Transistor Case StyleISOTOP
                      No. of Pins4Pins
                      Qualification-
                      Product RangeHiPerFET Series
                      SVHCNo SVHC (17-Jan-2023)

                      Product Overview

                      The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.

                      • Fast intrinsic rectifier
                      • High dv/dt rating
                      • Rugged polysilicon gate cell structure
                      • Easy to mount
                      • Space savings
                      • High power density

                      Applications

                      Power Management, Lighting, Motor Drive & Control

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      80A

                      Drain Source On State Resistance

                      0.055ohm

                      Rds(on) Test Voltage

                      10V

                      Transistor Mounting

                      Module

                      Power Dissipation

                      780W

                      Transistor Case Style

                      ISOTOP

                      Qualification

                      -

                      SVHC

                      No SVHC (17-Jan-2023)

                      Transistor Polarity

                      N Channel

                      Drain Source Voltage Vds

                      500V

                      On Resistance Rds(on)

                      0.055ohm

                      Gate Source Threshold Voltage Max

                      4.5V

                      Power Dissipation Pd

                      780W

                      Operating Temperature Max

                      150°C

                      No. of Pins

                      4Pins

                      Product Range

                      HiPerFET Series

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      Germany
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (17-Jan-2023)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.234507
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